bfg 193 oct-27-1999 1 npn silicon rf transistor for low noise, high-gain amplifiers up to 2 ghz for linear broadband amplifiers f t = 8 ghz f = 1.3 db at 900 mhz vps05163 1 2 3 4 esd : e lectro s tatic d ischarge sensitive device, observe handling precaution! type marking pin configuration package bfg 193 BFG193 1 = e 2 = b 3 = e 4 = c sot-223 maximum ratings parameter symbol value unit collector-emitter voltage v ceo 12 v collector-emitter voltage v ces 20 collector-base voltage v cbo 20 emitter-base voltage v ebo 2 collector current i c 80 ma base current i b 10 total power dissipation , t s 87 c 1) p tot 600 mw junction temperature t j 150 c ambient temperature t a -65 ... 150 storage temperature t stg -65 ... 150 thermal resistance junction - soldering point r thjs 105 k/w 1 t s is measured on the collector lead at the soldering point to the pcb
bfg 193 oct-27-1999 2 electrical characteristics at t a = 25c, unless otherwise specified. parameter symbol values unit min. typ. max. dc characteristics collector-emitter breakdown voltage i c = 1 ma, i b = 0 v (br)ceo 12 - - v collector-emitter cutoff current v ce = 20 v, v be = 0 i ces - - 100 a collector-base cutoff current v cb = 10 v, i e = 0 i cbo - - 100 na emitter-base cutoff current v eb = 1 v, i c = 0 i ebo - - 1 a dc current gain i c = 30 ma, v ce = 8 v h fe 50 100 200 -
bfg 193 oct-27-1999 3 electrical characteristics at t a = 25c, unless otherwise specified. parameter symbol values unit min. typ. max. ac characteristics (verified by random sampling) transition frequency i c = 50 ma, v ce = 8 v, f = 500 mhz f t 6 8 - ghz collector-base capacitance v cb = 10 v, f = 1 mhz c cb - 0.6 0.9 pf collector-emitter capacitance v ce = 10 v, f = 1 mhz c ce - 0.4 - emitter-base capacitance v eb = 0.5 v, f = 1 mhz c eb - 2 - noise figure i c = 10 ma, v ce = 8 v, z s = z sopt , f = 900 mhz f = 1.8 ghz f - - 1.3 2.1 - - db power gain, maximum available 1) i c = 30 ma, v ce = 8 v, z s = z sopt , z l = z lopt , f = 900 mhz f = 1.8 ghz g ma - - 15.5 10 - - transducer gain i c = 30 ma, v ce = 8 v, z s = z l = 50 , f = 900 mhz f = 1.8 ghz | s 21e | 2 - - 13.5 8 - - 1 g ma = | s 21 / s 12 | (k-(k 2 -1) 1/2 )
bfg 193 oct-27-1999 4 total power dissipation p tot = f ( t a *, t s ) * package mounted on epoxy 0 20 40 60 80 100 120 c 150 t a ,t s 0 50 100 150 200 250 300 350 400 450 500 550 600 mw 700 p tot t s t a permissible pulse load r thjs = f ( t p ) 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s t p 0 10 1 10 2 10 3 10 k/w r thjs 0.5 0.2 0.1 0.05 0.02 0.01 0.005 d = 0 permissible pulse load p totmax / p totdc = f ( t p ) 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s t p 0 10 1 10 2 10 - p totmax / p totdc d = 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5
bfg 193 oct-27-1999 5 collector-base capacitance c cb = f ( v cb ) f = 1mhz 0 4 8 12 16 v 22 v cb 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 pf 1.3 c cb transition frequency f t = f ( i c ) v ce = parameter 0 10 20 30 40 50 60 70 ma 90 i c 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 ghz 9.0 f t 10v 5v 3v 2v 1v 0.7v power gain g ma , g ms = f ( i c ) f = 0.9ghz v ce = parameter 0 10 20 30 40 50 60 70 ma 90 i c 4 6 8 10 12 14 16 db 20 g 10v 5v 3v 2v 1v 0.7v power gain g ma , g ms = f ( i c ) f = 1.8ghz v ce = parameter 0 10 20 30 40 50 60 70 ma 90 i c 0 2 4 6 8 db 12 g 10v 5v 3v 2v 1v 0.7v
bfg 193 oct-27-1999 6 power gain g ma , g ms = f ( v ce ):_____ | s 21 | 2 = f ( v ce ):--------- f = parameter 0 2 4 6 8 v 12 v ce 0 2 4 6 8 10 12 14 db 18 g 0.9ghz 1.8ghz 0.9ghz 1.8ghz i c =30ma intermodulation intercept point ip 3 = f ( i c ) (3rd order, output, z s = z l =50 ) v ce = parameter, f = 900mhz 0 10 20 30 40 50 60 ma 80 i c 10 15 20 25 dbm 35 ip 3 8v 5v 3v 2v 1v power gain g ma , g ms = f ( f ) v ce = parameter 0.0 0.5 1.0 1.5 2.0 2.5 ghz 3.5 f 0 5 10 15 20 25 db 35 g 10v 2v 1v 0.7v i c =30ma power gain | s 21 | 2 = f ( f ) v ce = parameter 0.0 0.5 1.0 1.5 2.0 2.5 ghz 3.5 f -2 2 6 10 14 18 22 26 db 32 s 21 10v 2v 1v 0.7v i c =30ma
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